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131.
In the present paper an analytical potential form is used for overlap repulsive energy, derived by Harrison from quantum mechanical considerations, along with the composite effect of three-body forces and intersublattice displacement. The short-range overlap parameters in Harrison's potential form have direct correlation with the valence state energies for outermost electrons. The potential model is applied to calculate the third and fourth order elastic constants, first and second pressure derivatives of second order elastic constants, Grüneisen parameter and its volume dependence, Anderson parameter, and thermal expansion coefficient for three non-centrosymmetric crystals, viz. CaF2, SrF2 and BaF2. The calculated values of various physical quantities are found to be in good agreement with experimental data.The authors are grateful to Dr. Mansour Khalef, the Head of Physics Department, TNRC, Tajura (Tripoli) for the facilities and encouragements. 相似文献
132.
A. L. Apanasenko A. V. Kuznichenko Yu. B. Govyadovskii V. G. Yakunin 《Journal of Applied Spectroscopy》1991,54(3):271-276
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 3, pp. 438–444, March, 1991. 相似文献
133.
Yu. K. Voron'ko A. B. Kudryavtsev V. V. Osiko E. V. Sorokin 《Journal of Applied Spectroscopy》1991,55(4):953-957
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 4, pp. 535–540, October, 1991. 相似文献
134.
135.
B. P. Harlamov 《Journal of Mathematical Sciences》2006,133(3):1371-1377
An inverse process with independent positive increments is considered. For such a process, the first hitting time τx of level x as a function of x ≥ 0 is a proper process with independent positive increments. In terms of first hitting times
and their Levy measures, multidemensional distribution densities and Laplace transformations are derived. Stationary distributions
of increments of the process are investigated. Bibliography: 8 titles.
__________
Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 311, 2004, pp. 286–297. 相似文献
136.
The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0). 相似文献
137.
138.
A. B. Mazo 《Fluid Dynamics》2002,37(6):913-918
Plane ideal incompressible flow in a rectangular channel partitioned by a thin permeable barrier (lattice) is considered. In flowing through the lattice the stream suddenly (jumpwise) changes direction and loses energy. The flow is assumed to be vortical; the vorticity is discontinuous on the lattice. A mathematical formulation of the problem for the stream function is proposed in the form of a nonlinear elliptic equation with coefficients discontinuous on the lattice line. A numerical solution is constructed using the finite-element iteration method. The results of the numerical simulation show how the flow velocity profile in the channel can be controlled by means of permeable barriers. 相似文献
139.
A. R. Volkov B. V. Shul'gin T. I. Polupanova V. N. Lebedev A. A. Nagornyi V. L. Petrov Yu. F. Kargin 《Journal of Applied Spectroscopy》1991,54(6):585-590
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 6, pp. 970–975, June, 1991. 相似文献
140.